導(dǎo)模法長(zhǎng)晶爐

所屬分類(lèi)：

Ga2O3單晶生長(zhǎng)及外延設(shè)備

導(dǎo)模法長(zhǎng)晶爐

概要：

本設(shè)備主要用于氧化鎵（Ga2O3）單晶生長(zhǎng)，將原料放在留有狹縫的模具中，熔液借虹吸作用上升到模具頂部，受籽晶誘導(dǎo)結(jié)晶生長(zhǎng)成單晶。

關(guān)鍵詞：

導(dǎo)模法長(zhǎng)晶爐

導(dǎo)模法長(zhǎng)晶爐

產(chǎn)品概述/Product Introduction：

This equipment is mainly used for gallium oxide (Ga2O3) single crystal growth, the raw material is placed in the mold with a slit, the molten liquid rises to the top of the mold by siphoning, and is induced by the seed crystals to crystallize and grow into a single crystal.

提供2英寸驗(yàn)證工藝

Provide 2 inches validation process

產(chǎn)品特點(diǎn)/Product Characteristics：

♦ 產(chǎn)量:2-6英寸

Capacity:2-6 inches

♦最高溫度:1900℃

Maximum temperature:1900°C

♦配置:上稱(chēng)重方式精度:10mg

Configuration:Upper weighing method accuracy:10mg

♦加熱方式:RF

Heating method:RF

♦氣體:3路